Abstract

Recently ferroelectric properties have been found in hafnia-based nanosized films. Such films are of the utmost interest for development of a universal memory, which combines the advantages of random access memory and flash memory. The paper studies optical properties of hafnia-zirconium oxide films H-f_xZr_yO₂ and lanthanum-alloyed hafnia-zirconium oxide films La:Hf_xZr_yO₂. Fluctuations of thickness in Hf_xZr_yO₂ do not exceed 3.5%, fluctuations of thickness in La:Hf_xZr_yO₂ films—3.2%. Optical properties are analyzed based on effective-medium theory. According to effective-medium theory data, Hf_xZr_yO₂ films contain 46% HfO₂, 54% ZrO₂, La:Hf_xZr_yO₂ films contain 47.5% HfO₂, 52.4% ZrO₂, 2.5% La₂O₃.

中文翻译：

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根据椭圆光度数据的铁电薄膜 HfxZryO2 和 La:HfxZryO2 的光学特性

摘要

最近在基于氧化铪的纳米薄膜中发现了铁电特性。此类薄膜对于开发通用存储器至关重要，它结合了随机存取存储器和闪存的优点。本文研究了氧化铪锆薄膜Hf _x Zr _y O ₂和镧合金氧化铪锆薄膜La:Hf _x Zr _y O ₂的光学性能。 Hf _x Zr _y O ₂膜的厚度波动不超过3.5％，La:Hf _x Zr _y O ₂膜的厚度波动为3.2％。基于有效介质理论分析光学特性。根据有效介质理论数据，Hf _x Zr _y O ₂薄膜含有46% HfO ₂、54% ZrO ₂，​​La:Hf _x Zr _y O ₂薄膜含有47.5% HfO ₂、52.4% ZrO ₂、2.5% La ₂欧₃。