Using time-domain integration (TDI) and a two-dimensional sensor is beneficial for X-ray imaging of moving objects. Applying on-chip instead off-chip TDI decreases the required data throughput between an ASIC and the backend several times [1]. This, in turn, allows us to significantly simplify the ASIC itself as well as the backend. We present the results of test measurements of an ASIC dedicated for X-ray material discrimination by using on-chip TDI and a CdTe sensor. The main part of the ASIC is an 192 × 64 pixel matrix. The pixel size is 100 μm × 100 μm, so the chip size is approximately 6.7 mm × 2 cm. The chip is manufactured in a 130 nm CMOS technology with 8 metal layers. A single pixel analog front-end consists of a charge-sensitive amplifier, a shaper, and three discriminators followed by counters. The test was conducted with a 0.75 mm thick CdTe sensor. First, we show the results of the discriminator offset correction followed by the evaluation of the pixel analog front-end gain and noise conducted with single energy radiation. Next, the results of moving objects imaging are obtained by using an industrial X-ray machine for food inspection (continuous energy spectrum). This is carried out to present an example of the image and evaluate the image signal to noise ratio for different energy discriminator thresholds, sensor bias voltages, detector module temperatures and object speeds.

中文翻译：

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使用片上时域集成和 CdTe 传感器测试用于 X 射线材料辨别的 ASIC 测量

使用时域积分 (TDI) 和二维传感器有利于运动物体的 X 射线成像。应用片内 TDI 而非片外 TDI 会数倍降低 ASIC 和后端之间所需的数据吞吐量 [1]。这反过来又使我们能够显着简化 ASIC 本身以及后端。我们展示了使用片上 TDI 和 CdTe 传感器对专用于 X 射线材料辨别的 ASIC 进行测试测量的结果。 ASIC的主要部分是一个192×64像素矩阵。像素尺寸为100μm×100μm，因此芯片尺寸约为6.7mm×2cm。该芯片采用 130 nm CMOS 技术制造，具有 8 层金属。单像素模拟前端由电荷敏感放大器、整形器和三个鉴别器以及后面的计数器组成。该测试使用 0.75 毫米厚的 CdTe 传感器进行。首先，我们展示了鉴别器偏移校正的结果，然后评估了使用单能量辐射进行的像素模拟前端增益和噪声。接下来，使用用于食品检查的工业X射线机（连续能谱）获得运动物体成像的结果。执行此操作是为了呈现图像的示例，并评估不同能量鉴别器阈值、传感器偏置电压、探测器模块温度和物体速度的图像信噪比。