As the manufacturing process of silicon-based integrated circuits (ICs) approaches its physical limit, the quantum effect of silicon-based field-effect transistors (FETs) has become increasingly evident. And the burgeoning carbon-based semiconductor technology has become one of the most disruptive technologies in the post-Moore era. As one-dimensional nanomaterials, carbon nanotubes (CNTs) are far superior to silicon at the same technology nodes of FETs because of their excellent electrical transport and scaling properties, rendering them the most competitive material in the next-generation ICs technology. However, certain challenges impede the industrialization of CNTs, particularly in terms of material preparation, which significantly hinders the development of CNT-based ICs. Focusing on CNT-based ICs technology, this review summarizes its main technical status, development trends, existing challenges, and future development directions.

中文翻译：

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碳纳米管集成电路技术：提纯、组装和集成

随着硅基集成电路（IC）的制造工艺接近其物理极限，硅基场效应晶体管（FET）的量子效应变得越来越明显。而蓬勃发展的碳基半导体技术已成为后摩尔时代最具颠覆性的技术之一。作为一维纳米材料，碳纳米管（CNT）因其优异的电传输和缩放特性，在与场效应管相同技术节点上远远优于硅，使其成为下一代IC技术中最具竞争力的材料。然而，某些挑战阻碍了碳纳米管的工业化，特别是在材料制备方面，这极大地阻碍了基于碳纳米管的集成电路的发展。本文针对基于碳纳米管的集成电路技术，总结了其主要技术现状、发展趋势、存在的挑战以及未来的发展方向。