The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon-On-Insulator (FDSOI) technology exposed to ultra-high total ionizing dose (TID) was investigated. Custom structures including n- and p-channel devices with different sizes and threshold voltage flavours were irradiated with X-rays up to a TID of 100 Mrad(SiO₂) with different back-gate bias configurations, from -8 V to 2 V. The investigation revealed that the performance is significantly affected by TID, with the radiation response being dominated by the charge trapped in the buried oxide.

中文翻译：

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22 nm全耗尽绝缘体上硅的特性和超高总电离剂量响应

研究了 22 nm 全耗尽绝缘体上硅 (FDSOI) 技术中 MOS 晶体管暴露于超高总电离剂量 (TID) 下的辐射响应。使用 X 射线照射具有不同尺寸和阈值电压风格的 n 沟道和 p 沟道器件的定制结构，TID 高达 100 Mrad(SiO ₂ )，具有不同的背栅偏压配置（-8 V 至 2 V）。研究表明，TID 对性能有显着影响，辐射响应主要由埋入氧化物中捕获的电荷决定。