High-quality single crystals of both pure and Sn:β-GaO single crystals weregrown using the optical floating zone technique and a comprehensive study of its luminescence and scintillation properties was carried out. The pure and Sn:β-GaO grown crystals were oriented along (100) by Laue diffraction pattern and its monoclinic structure was confirmed using a single crystal XRD. X-ray induced luminescence spectrum shows a maximum emission peak at 365 nm. The cut off wavelength was observed around 258 nm and the optical band gap was calculated to be 4.64 eV from UV–Vis-NIR transmission spectroscopy. The room temperature Raman spectra were recorded and the various vibration modes were investigated. Low temperature (10 to 300 K) and high temperature (325 to 675 K) TL measurements were carried out on X-ray irradiated crystals and its TL kinetic parameters such as activation energy (eV) and frequency factor (S) were calculated. Scintillation decay time profiles were measured for both pure and Sn-doped crystals under Cs γ-ray excitation. The calculated scintillation light output is 2300 Ph/5.5 Mev for Sn:β-GaO crystal under α-particle excitation from Am radiation source.

中文翻译：

---

光学浮区技术生长的纯β-Ga2O3单晶和Sn掺杂β-Ga2O3单晶的光学性质

采用光学浮区技术生长出高质量的纯单晶和Sn:β-GaO单晶，并对其发光和闪烁性能进行了全面研究。纯的和Sn:β-GaO生长的晶体通过劳厄衍射图样沿着(100)取向，并且使用单晶XRD证实了其单斜结构。 X 射线诱导发光光谱显示最大发射峰位于 365 nm。在 258 nm 附近观察到截止波长，根据 UV-Vis-NIR 透射光谱计算出光学带隙为 4.64 eV。记录了室温拉曼光谱并研究了各种振动模式。对X射线照射的晶体进行低温（10~300 K）和高温（325~675 K）TL测量，并计算其活化能（eV）和频率因子（S）等TL动力学参数。在 Cs γ 射线激发下测量了纯晶体和 Sn 掺杂晶体的闪烁衰减时间曲线。经计算，在 Am 辐射源的 α 粒子激发下，Sn:β-GaO 晶体的闪烁光输出为 2300 Ph/5.5 Mev。