In perovskite solar cells (PSCs), a common characteristic of highly effective interface passivation materials is low conductivity. Gains in voltage are thus often disproportionately offset by resistive losses. Local contact approaches can minimize this trade‐off and have a proven track record in conventional silicon photovoltaics. Indeed, recent record efficiencies for centimeter‐scale PSCs exploited architectures where the passivation layer partially covers the perovskite‐transport layer interface. Here, we use a three‐dimensional numerical device model to determine practical performance limits to local contact geometries and consider both the optimum contact dimensions and the trade‐offs involved in relaxing these dimensions for ease of fabrication. We observe the potential for substantial PCE increases with local contacts. In devices where power loss occurs solely through recombination at the contacted interface, PCE can be enhanced by up to 10% absolute by comparison to a full‐area contact. However, optimum PCEs depend on contacts on the order of nanometers. We show that more fabrication‐friendly micrometer‐scale contacts still boost PCE, but the absolute enhancement falls short due to the relatively low bulk perovskite charge carrier diffusion length. This may ultimately motivate methods of interface engineering that produce ‘effective’ local contact geometries at nanometer‐scales, such as via self‐forming layers.This article is protected by copyright. All rights reserved.

中文翻译：

---

局部接触钙钛矿太阳能电池的性能潜力

在钙钛矿太阳能电池（PSC）中，高效界面钝化材料的一个共同特点是低电导率。因此，电压增益常常被电阻损耗不成比例地抵消。局部接触方法可以最大限度地减少这种权衡，并且在传统硅光伏发电中拥有良好的记录。事实上，最近厘米级 PSC 的效率记录利用了钝化层部分覆盖钙钛矿-传输层界面的架构。在这里，我们使用三维数值器件模型来确定局部接触几何形状的实际性能限制，并考虑最佳接触尺寸以及为了便于制造而放宽这些尺寸所涉及的权衡。我们观察到，通过与当地的接触，PCE 有可能大幅增加。在仅通过接触界面复合发生功率损耗的器件中，与全区域接触相比，PCE 绝对值可提高高达 10%。然而，最佳 PCE 取决于纳米量级的接触。我们表明，更易于制造的微米级接触仍然可以提高 PCE，但由于钙钛矿体电荷载流子扩散长度相对较低，绝对增强效果不足。这可能最终激发界面工程方法的发展，这些方法可以在纳米尺度上产生“有效”的局部接触几何形状，例如通过自形成层。本文受版权保护。版权所有。