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Noise Robust Reservoir Computing Based on Flexible Doped Hafnium Oxide Memcapacitors
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2024-03-28 , DOI: 10.1109/ted.2024.3379159
Qianye Xing 1 , Mengjiao Pei 1 , Lesheng Qiao 1 , Baocheng Peng 1 , Kailu Shi 1 , Xiao Fang 1 , Hangyuan Cui 1 , Changjin Wan 1 , Qing Wan 2
Affiliation  

In this work, we report a flexible doped hafnium oxide memcapacitor for building a noise-robust reservoir computing (RC) system. The nonlinearity and fading memory properties required for RC could be obtained from the capacitively coupled polarization switching and charge trapping in devices. The flexible oxide-based RC system shows a maximum accuracy of ~91.4% in the music genres (GTZAN Genre Collection dataset) classification task. The high noise robustness of the system has been verified by adding different signal-to-noise ratios (SNRs) of environment noise (NOISEX-92 dataset) to the raw music. The accuracy remains over 87% even with an SNR of 0 dB with respect to six types of noises. Our results are expected to open up opportunities for flexible electronics with high computing capability.

中文翻译:

基于柔性掺杂氧化铪薄膜电容器的噪声鲁棒存储计算

在这项工作中,我们报告了一种用于构建抗噪声储层计算(RC)系统的柔性掺杂氧化铪薄膜电容器。 RC 所需的非线性和衰落记忆特性可以通过器件中的电容耦合极化切换和电荷捕获来获得。灵活的基于氧化物的 RC 系统在音乐流派(GTZAN Genre Collection 数据集)分类任务中显示出约 91.4% 的最大准确度。通过向原始音乐添加不同的环境噪声信噪比(SNR)(NOISEX-92数据集),验证了系统的高噪声鲁棒性。对于六种噪声,即使信噪比为 0 dB,精度仍保持在 87% 以上。我们的研究结果预计将为具有高计算能力的柔性电子产品带来机遇。
更新日期:2024-03-28
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