Group IIIA metal chalcogenides are an auspicious material system due to their variability of properties and hence the multitude of application options, for example, in the fields of optoelectronic, thermoelectric, piezo‐, and ferroelectric devices. Indium and gallium selenide films are innovatively grown in a sequential PVD (physical vapor deposition) process starting from metal precursor layers of various thicknesses, which are then subject to chalcogenization in different selenium contents. The resulting thin films are investigated for structural and optical properties by Raman, XRD (X‐ray diffraction), and UV–Vis–NIR spectrometry, revealing that all the compounds In2Se3, InSe, In4Se3, Ga2Se3, and GaSe as well as different polytypes can be achieved depending on the metal/chalcogen ratio. Results from Raman and XRD spectroscopy are highly consistent, and also from the optical measurements changes in absorption characteristics can be correlated. The results indicate, that by fine‐tuning the selenium content, deliberately growing ultra‐thin layers of the different indium and gallium phases will be possible, thus opening up a promising route for 2D material fabrication. Given the scalability of the fabrication method, it is highly promising for large‐scale deployment of the materials.

中文翻译：

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成分和层厚变化下连续 PVD ​​生长的硒化铟和硒化镓：制备、结构和光学表征

IIIA 族金属硫族化物因其性能的可变性而成为一种有利的材料系统，因此具有多种应用选择，例如在光电、热电、压电和铁电器件领域。硒化铟和硒化镓薄膜采用连续 PVD（物理气相沉积）工艺，从不同厚度的金属前体层开始创新生长，然后以不同的硒含量进行硫属化。通过拉曼、XRD（X 射线衍射）和紫外-可见-近红外光谱法研究所得薄膜的结构和光学性质，结果表明所有化合物2硒3, 硒化铟, 铟4硒3, 镓2硒3、GaSe 以及不同的多型体可以根据金属/硫属元素的比例来实现。拉曼光谱和 XRD 光谱的结果高度一致，并且光学测量的吸收特性变化也可以相互关联。结果表明，通过微调硒含量，可以有意生长不同的铟和镓相的超薄层，从而为二维材料制造开辟了一条有前途的途径。鉴于制造方法的可扩展性，该材料的大规模部署非常有希望。