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Photoluminescence and thermally stimulated luminescence properties of undoped and Tb-doped Sr3Gd(PO4)3 single crystals
Radiation Physics and Chemistry ( IF 2.9 ) Pub Date : 2024-03-28 , DOI: 10.1016/j.radphyschem.2024.111721
Ezawa Haruaki , Yuma Takebuchi , Kai Okazaki , Kensei Ichiba , Takumi Kato , Daisuke Nakauchi , Noriaki Kawaguchi , Takayuki Yanagida

Using the floating zone method, undoped and 0.5, 1, and 5% Tb-doped SrGd(PO) (SGPO) single crystals were synthesized. Investigations were conducted on the photoluminescence (PL) and thermally stimulated luminescence (TSL) of all the SGPO single crystals. The highest PL quantum yield was shown in the 5% Tb-doped single crystal among the synthesized SGPO single crystals. The undoped SGPO single crystal displayed an emission peak in both TSL and PL at 310 nm owing to the Gd 4f–4f transition. In the Tb-doped SGPO single crystals, emission peaks in PL and TSL at 310–620 nm were caused by the 4f–4f transitions of Tb in addition to Gd. In the TSL dose response function, the 1% Tb-doped SGPO single crystal exhibited the highest TSL intensity, and the TSL signal could be detected at least 0.01 mGy.

中文翻译:

未掺杂和Tb掺杂Sr3Gd(PO4)3单晶的光致发光和热受激发光特性

采用浮区法合成了未掺杂和 0.5%、1% 和 5% Tb 掺杂的 SrGd​​(PO) (SGPO) 单晶。对所有 SGPO 单晶的光致发光 (PL) 和热受激发光 (TSL) 进行了研究。在合成的 SGPO 单晶中,5% Tb 掺杂的单晶显示出最高的 PL 量子产率。由于 Gd 4f-4f 跃迁,未掺杂的 SGPO 单晶在 TSL 和 PL 中均在 310 nm 处显示出发射峰。在 Tb 掺杂的 SGPO 单晶中,PL 和 TSL 中 310-620 nm 处的发射峰是由 Tb 和 Gd 的 4f-4f 跃迁引起的。在TSL剂量响应函数中,1%Tb掺杂的SGPO单晶表现出最高的TSL强度,至少可以检测到0.01 mGy的TSL信号。
更新日期:2024-03-28
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