In this article, write-once-read-many-times (WORM) memory behavior of HfZrO (HZO) ferroelectric material is demonstrated. A stoichiometric Hf0.5Zr0.5O2 thin film prepared using a sol–gel process is used as a resistive switching (RS) layer. The top and bottom electrodes are Al and n+-Si, respectively. The Al/HZO/n+-Si memory shows a low current of $10^{-{11}}$ A at a read voltage of 0.6 V in the OFF state. A writing process occurs when the voltage on Al electrode increases to ~2.8 V. The ratio of the OFF-state resistance ( ${R}_{\text {off}}{)}$ to ON-state resistance ( ${R}_{\text {on}}{)}$ is $10^{{6}}$ . Both data retention and stress tests indicate that ${R}_{\text {off}}$ and ${R}_{\text {on}}$ can remain the same for over $10^{{4}}$ s. Moreover, data stability is further confirmed at an elevated temperature of 85 °C. The switching speed of the HZO memory is ~40 ns, corresponding to a power consumption of 0.98 nJ. The RS mechanism is investigated, and the carrier conduction mechanisms are studied by the analysis of current–voltage characteristics at different temperatures.

中文翻译：

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溶胶-凝胶铪锆氧化物的一次写入多次读取非易失性存储器特性

在本文中，演示了 HfZrO (HZO) 铁电材料的一次写入多次读取 (WORM) 存储行为。使用溶胶-凝胶工艺制备的化学计量的 Hf0.5Zr0.5O2 薄膜用作电阻开关（RS）层。顶部和底部电极分别是Al和n+-Si。 Al/HZO/n+-Si 存储器显示出低电流 $10^{-{11}}$A 在关闭状态下读取电压为 0.6 V。当 Al 电极上的电压增加到约 2.8 V 时，就会发生写入过程。断态电阻 ( ${R}_{\text {关闭}}{)}$至导通状态电阻（ ${R}_{\text {上}}{)}$是 $10^{{6}}$ 。数据保留和压力测试都表明 ${R}_{\text {关闭}}$和 ${R}_{\文字{上}}$可以保持不变超过 $10^{{4}}$s。此外，在85°C的高温下进一步证实了数据稳定性。 HZO 存储器的切换速度约为 40 ns，对应的功耗为 0.98 nJ。研究了RS机制，并通过分析不同温度下的电流-电压特性来研究载流子传导机制。