An ON-chip vacuum transistor based on electron emission from SiOx tunneling diodes formed at the side surface of a thin SiO2 film is proposed, where electrons transport in the vacuum channel between the electron emitter and collector electrode is modulated by an underneath gate electrode. The device performances are studied by the finite element simulation method. An ON/OFF current ratio up to 105 and a subthreshold slope of ~500 mV/dec are obtained by simulation. Experimentally, a vacuum transistor based on SiOx tunneling diodes in a surrounding structure is fabricated, achieving an ON/OFF current ratio of 104 and a subthreshold slope of ~5 V/dec. The performance degradation in experiments is mainly attributed to unoptimized device structures.

中文翻译：

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基于SiOₓ隧道二极管电子发射的真空晶体管

提出了一种片上真空晶体管，其基于形成在薄 SiO2 薄膜侧面的 SiOx 隧道二极管的电子发射，其中电子发射极和集电极之间的真空通道中的电子传输由下面的栅电极调制。采用有限元仿真方法研究了装置的性能。通过仿真获得了高达 105 的开/关电流比和 ~500 mV/dec 的亚阈值斜率。通过实验，制造了一种基于周围结构中 SiOx 隧道二极管的真空晶体管，实现了 104 的开/关电流比和 ~5 V/dec 的亚阈值斜率。实验中性能下降主要归因于未优化的器件结构。