To meet the demand for next-generation electronic products with excellent driving ability and high switching speed, using InSnO electrode material as a semiconductor channel layer is one of the attempts to improve the mobility of thin-film transistors (TFTs). However, instabilities in the environment limit the development of high-mobility semiconductors. In this work, an ultrathin hafnium (Hf)-doped InSnO (HITO) layer is prepared with enhanced stability, which is achieved by radio frequency magnetron cosputtering at low temperature. The HITO layer is deposited onto InSnO (ITO) to reduce the oxygen vacancies concentration, and thus, the trapping and detrapping issues at the surface of ITO channel are suppressed, leading to a high mobility of 76.21 cm $^{{2}}\text{V}^{{-{1}}}\text{s}^{-{1}}$ , a low threshold voltage of −0.86 V, and a steep subthreshold swing (SS) of 0.24 V/decade. The HITO layer is insensitive to water and oxygen and effectively blocks the permeability channel layer. The fabricated HITO/ITO TFTs obtain improved stability in positive bias stress (PBS) tests in humidity condition. The threshold voltage shifts under PBS at 85% relative humidity for 3600 s decreased from −8.2 to 0.97 V. This work provides a feasible method for low-cost, high-mobility oxide TFTs, and the whole process temperature control below 150 °C also expands its application in flexible electronic devices.

中文翻译：

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通过界面工程提高 InSnO 薄膜晶体管的环境稳定性

为满足下一代电子产品对优异驱动能力和高开关速度的需求，采用InSnO电极材料作为半导体沟道层是提高薄膜晶体管（TFT）迁移率的尝试之一。然而，环境的不稳定限制了高迁移率半导体的发展。在这项工作中，通过低温射频磁控管共溅射制备了稳定性增强的超薄铪（Hf）掺杂InSnO（HITO）层。将HITO层沉积在InSnO（ITO）上以降低氧空位浓度，从而抑制ITO沟道表面的俘获和去俘获问题，从而获得76.21 cm的高迁移率 $^{{2}}\文本{V}^{{-{1}}}\文本{s}^{-{1}}$ 、-0.86 V 的低阈值电压和 0.24 V/十倍频程的陡峭亚阈值摆幅 (SS)。 HITO层对水和氧不敏感，有效阻断渗透通道层。所制造的 HITO/ITO TFT 在湿度条件下的正偏压 (PBS) 测试中获得了更高的稳定性。在85%相对湿度下PBS下3600秒的阈值电压漂移从-8.2V下降到0.97V。这项工作为低成本、高迁移率氧化物TFT提供了一种可行的方法，并且整个过程温度控制在150℃以下扩大其在柔性电子器件中的应用。