A programmable spin logic device with electrically controllable magnetization switching is proposed in this article. Based on Pt/Co/AlOx structure, the field-free perpendicular magnetization switching and controllable switching polarity can be achieved by utilizing the asymmetric bilateral gate voltages $\Delta {V}_{\text {G}}$ . Furthermore, together with the controlling ability of voltage-controlled magnetic anisotropy (VCMA) effect on the critical SOT current, more diverse programmability appears in the spin logic device. Six Boolean functions, as well as the half adder function, can be experimentally demonstrated based on the fabricated spin logic device. The proposed novel spin logic scheme shows potential application for the cutting-edge spin-based logic-in-memory.

中文翻译：

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通过双边电压对无场自旋轨道扭矩切换进行电场控制的自旋逻辑器件

本文提出了一种具有电控磁化切换的可编程自旋逻辑器件。基于Pt/Co/AlOx结构，利用不对称的双边栅极电压可以实现无场垂直磁化开关和可控开关极性 $\Delta {V}_{\text {G}}$ 。此外，加上压控磁各向异性（VCMA）效应对临界SOT电流的控制能力，自旋逻辑器件中出现了更加多样化的可编程性。可以基于制造的自旋逻辑器件对六个布尔函数以及半加器函数进行实验演示。所提出的新颖的自旋逻辑方案显示了尖端的基于自旋的内存逻辑的潜在应用。