Integrating multiple optical devices on a single chip to create the so- called photonic integrated circuit (PIC) provides the advantages of compact size and low cost, with broad application prospects in fields, such as information processing, sensing, photoelectricity coupling, optical communication, and interconnection. However, compatibilities of material and fabrication are the main impediments to realize the PIC. Herein, we propose a PIC solution based on the epitaxial III–V on Si, with all active devices (a light source, an electroabsorption modulator, and two photodiodes) adopting the same InGaN/AlGaN multiple quantum wells (MQW) diode structure to solve the abovementioned compatibility problems. The light-emitting peak wavelength of the integrated near ultraviolet (UV) light source is 385 nm. Because the MQW layer is sandwiched into the waveguide (WG), all the signal conversion and transmission are limited in the WG with relatively high coupling efficiency. ON-chip data transmission can be realized using direct modulation via the light-emitting diode or the indirect modulation via the electroabsorption modulator at a single light path. The extinction ratio of the InGaN/AlGaN MQW modulator under a reverse bias voltage of 8 V is approximately 8.4% and can be further increased by enlarging the bias. The proposed UV PIC solution features simple structure and fabrication, with potential value in UV microscopy, biosensing, and ON-chip data communication.

中文翻译：

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基于硅上外延 III-N 的紫外光子集成芯片，用于短距离片上数据传输

将多个光学器件集成在单个芯片上形成所谓的光子集成电路（PIC），具有尺寸紧凑、成本低廉的优点，在信息处理、传感、光电耦合、光通信、和互连。然而，材料和制造的兼容性是实现 PIC 的主要障碍。在此，我们提出了一种基于Si上外延III-V族的PIC解决方案，所有有源器件（一个光源、一个电吸收调制器和两个光电二极管）均采用相同的InGaN/AlGaN多量子阱（MQW）二极管结构来解决上述兼容性问题。集成近紫外（UV）光源的发光峰值波长为385 nm。由于MQW层夹在波导（WG）中，所有信号转换和传输都限制在波导内，耦合效率相对较高。片上数据传输可以通过发光二极管直接调制或通过电吸收调制器在单光路间接调制来实现。 InGaN/AlGaN MQW调制器在8 V反向偏压下的消光比约为8.4%，并且可以通过增大偏压进一步提高。所提出的 UV PIC 解决方案结构和制造简单，在紫外显微镜、生物传感和片上数据通信方面具有潜在价值。