The synthesis of novel NaErCuTiO (NECTO) ceramics using conventional solid-state methods and their characterization as well as their dielectric properties were investigated at various temperatures of sintering. SEM results revealed an increase in average grain size with sintering temperature. The sintered NECTO sample at 1080 °C exhibited good frequency stability and a higher dielectric constant (′) of about 6 × 10 at 1 kHz. It is found that the sintering temperature correlates with the dielectric constant, and it agrees with the IBLC model. Additionally, the sample displayed a dielectric loss (tanδ) of less than 0.08 throughout a wide range of frequencies. Particularly, the sintered sample at 1060 °C for 10 h had a significantly low tanδ of 0.06 and exhibited a ′ of roughly 3.19 × 10 at 1 kHz. A significant decrease in tanδ with increased R was observed, suggesting that reduced grain boundary resistance could minimize the dielectric loss. Moreover, optimizing the sintering temperature enhanced the temperature stability of NECTO ceramics.

中文翻译：

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调节新型 Na1/2Er1/2Cu3Ti4O12 陶瓷的介电性能：烧结温度、晶粒尺寸和晶界电阻的相互作用

使用传统固态方法合成新型 NaErCuTiO (NECTO) 陶瓷，并在不同的烧结温度下研究了它们的表征及其介电性能。 SEM 结果显示平均晶粒尺寸随烧结温度的增加而增加。在 1080 °C 下烧结的 NECTO 样品表现出良好的频率稳定性和在 1 kHz 时约 6 × 10 的较高介电常数 (')。结果发现，烧结温度与介电常数相关，与IBLC模型相符。此外，该样品在很宽的频率范围内表现出小于 0.08 的介电损耗 (tanδ)。特别是，在 1060 °C 下烧结 10 小时的样品的 tanδ 非常低，为 0.06，并且在 1 kHz 下表现出大约 3.19 × 10 的 a'。观察到随着 R 的增加，tanδ 显着降低，这表明晶界电阻的降低可以最大限度地减少介电损耗。此外，优化烧结温度增强了NECTO陶瓷的温度稳定性。