:: Silicon Nanowires (SiNWs), a novel category of nanomaterials, exhibit several outstanding properties, including superior transistor performance, quantum tunneling effects, and remarkable electrical and optical capabilities. These properties are expected to contribute significantly to the development of future nanodevices, such as sensors and optoelectronic components. The potential for device miniaturization with SiNWs is based on their ease of monocrystallization. This leads to a reduced rate of hole-electron complexes and their extensive specific surface area that promotes boundary effects, thereby diminishing conductivity. Characterized by unique structural attributes, SiNWs hold promise for a wide range of applications in various sectors. To date, multiple methods have been established for SiNW fabrication, including solgel, electrochemical, laser ablation, chemical vapor deposition, and thermal vapor deposition techniques. Subsequently, the focus has shifted to the application of SiNWs in electronics, energy, and biomedicine. SiNWs are instrumental in producing high-performance electronic devices, such as field-effect transistors, sensors, and memory units. They also exhibit outstanding photovoltaic properties, making them suitable for high-efficiency solar cell and photocatalyst production. Additionally, SiNWs are poised to make significant contributions to biomedicine, particularly in biosensors, drug delivery systems, and tissue engineering materials. This article provides a concise review of the current status of SiNWs in electronics, sensing devices, and solar cell applications, and their roles in high-performance transistors, biosensors, and solar cells. It concludes with an exploration of the challenges and prospects for SiNWs. In summary, the unique attributes of SiNWs establish them as a versatile nanomaterial with broad applicability. This review offers a comprehensive overview of SiNW research and theoretical insights that may guide similar studies. The insights into recent SiNW research presented here are intended to inform future applications and investigations involving these nanomaterials.

中文翻译：

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硅纳米线的应用

:: 硅纳米线 (SiNW) 是一种新型纳米材料，具有多种出色的特性，包括卓越的晶体管性能、量子隧道效应以及卓越的电学和光学功能。这些特性预计将对未来纳米器件（例如传感器和光电元件）的发展做出重大贡献。 SiNW 器件小型化的潜力取决于其易于单晶化。这导致空穴-电子复合物的比率降低，其广泛的比表面积促进了边界效应，从而降低了电导率。硅纳米线具有独特的结构属性，有望在各个领域得到广泛应用。迄今为止，已经建立了多种 SiNW 制造方法，包括溶胶凝胶、电化学、激光烧蚀、化学气相沉积和热气相沉积技术。随后，重点转向SiNWs在电子、能源和生物医学方面的应用。 SiNW 在生产高性能电子设备方面发挥着重要作用，例如场效应晶体管、传感器和存储单元。它们还表现出出色的光伏特性，使其适用于高效太阳能电池和光催化剂的生产。此外，SiNW 有望为生物医学做出重大贡献，特别是在生物传感器、药物输送系统和组织工程材料方面。本文简要回顾了 SiNW 在电子、传感设备和太阳能电池应用中的现状，及其在高性能晶体管、生物传感器和太阳能电池中的作用。最后探讨了硅纳米线的挑战和前景。总之，SiNW 的独特属性使其成为具有广泛适用性的多功能纳米材料。这篇综述提供了 SiNW 研究的全面概述以及可能指导类似研究的理论见解。这里介绍的对最近 SiNW 研究的见解旨在为涉及这些纳米材料的未来应用和研究提供信息。