Machining of silica glass is a challenging task due to its physical properties like brittleness, electrically insulated, etc. Although with the use of electrochemical discharge, it is possible to make holes and channels in silica glass, but the generation of spark discharge and removal of materials is a complex phenomenon in the electrochemical discharge process. Several research works were carried out previously to control the spark discharge as well as machining accuracy using rotational tool, the addition of ultrasonic vibration, including a magnetic field, and the use of different electrolytes, etc. A novel tool feeding technique i.e. using a horizontal tool and vertically upward tool feeding technique was used during milling on glass. The effects of voltage, the tool feed rate (TFR) and the concentration of electrolyte on the material removal rate and machining quality were studied in this work. The machined channel was examined under an optical measuring microscope as well as scanning electron microscope. The machining surface was also observed using a coherence correlation interferometry image to analyze in-depth surface topography of machined channels. Material removal rate and Ra value of the bottom layer were measured. The material removal rate of 6.097 µg/min was noticed at 25 wt% of electrolyte concentration, 40 µm/s of TFR and 45 V of applied voltage. The bottom layer’s surface roughness (Ra) was found as low as 0.222 µm (Ra) at parametric conditions of 40 V, 40 µm/s TFR, and 15 wt% electrolyte concentration by employing the developed novel tool feeding technique.

由于石英玻璃具有脆性、电绝缘性等物理特性，其机械加工是一项具有挑战性的任务。虽然利用电化学放电可以在石英玻璃上制造孔和通道，但火花放电的产生和去除材料的电化学放电过程是一个复杂的现象。之前进行了几项研究工作，以控制火花放电以及使用旋转刀具、添加超声波振动（包括磁场）以及使用不同电解质等来控制火花放电和加工精度。一种新颖的刀具进给技术，即使用水平刀具在玻璃铣削过程中使用刀具和垂直向上的刀具进给技术。本文研究了电压、刀具进给速率（TFR）和电解液浓度对材料去除率和加工质量的影响。在光学测量显微镜和扫描电子显微镜下检查加工的通道。还使用相干相关干涉测量图像观察加工表面，以分析加工通道的深度表面形貌。测量底层的材料去除率和Ra值。在电解质浓度为 25 wt%、TFR 为 40 µm/s 且施加电压为 45 V 时，材料去除率为 6.097 µg/min。通过采用开发的新型工具进给技术，在 40 V、40 µm/s TFR 和 15 wt% 电解质浓度的参数条件下，发现底层的表面粗糙度 (Ra) 低至 0.222 µm (Ra)。