An electro-thermal coupling simulator for GaN devices based on electron Monte Carlo (e-MC) simulations is established. Taking GaN Metal Insulator Semiconductor High Electron Mobility Transistor (MISHEMT) as example, the non-equilibrium thermal transport processes of self-heating effect in the channel layer are studied. This simulator is mainly coupled by e-MC and the phonon Boltzmann transport equation (pBTE), physical property parameters and electric field parameters are provided by first-principles and Technology Computer Aided Design (TCAD), respectively. We first verify the e-MC program by calculating the electron transport properties of GaN materials, verify the feasibility of the established GaN MISHEMT model by using TCAD and obtained its operating characteristics. Further, the simulator is used to evaluate the non-equilibrium processes inside the channel layer in detail, the results show that there is significant consistency in the peak positions of electric field strength, heat generation and diffusion temperature, the diffusion temperature peak occurs at the secondary peak of heat generation. The frequency distribution of phonon emission under different drain-source bias voltages is revealed by phonon emission spectrum analysis. The strength of the non-equilibrium effect is measured by effective temperature. Increasing the drain-source bias voltage will significantly increase the peak temperature of hotspot and further enhance the non-equilibrium effect. Our study reports an efficient scheme for electro-thermal simulations of GaN MISHEMT, which provides insights for thermal management of GaN-based transistor devices.

中文翻译：

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基于电子蒙特卡罗和声子BTE的稳态GaN MISHEMT沟道层非平衡热传输研究

建立了基于电子蒙特卡罗（e-MC）模拟的GaN器件电热耦合模拟器。以GaN金属绝缘体半导体高电子迁移率晶体管(MISHEMT)为例，研究了沟道层中自热效应的非平衡热传输过程。该模拟器主要由e-MC和声子玻尔兹曼输运方程（pBTE）耦合，物理性质参数和电场参数分别由第一性原理和技术计算机辅助设计（TCAD）提供。我们首先通过计算GaN材料的电子传输特性来验证e-MC程序，利用TCAD验证所建立的GaN MISHEMT模型的可行性并获得其工作特性。进一步利用模拟器对沟道层内部的非平衡过程进行了详细的评估，结果表明，电场强度、发热和扩散温度的峰值位置具有显着的一致性，扩散温度峰值出现在沟道层内部的非平衡过程。次生热高峰。通过声子发射谱分析揭示了不同漏源偏置电压下声子发射的频率分布。非平衡效应的强度是通过有效温度来衡量的。提高漏源偏压将显着提高热点峰值温度，进一步增强非平衡效应。我们的研究报告了一种有效的 GaN MISHEMT 电热模拟方案，为基于 GaN 的晶体管器件的热管理提供了见解。