Owing to their remarkable electronic properties, silica ultrathin films have been utilized as an insulating layer in nanoelectronics systems. Silica films have been epitaxially grown on different substrates using various synthesis methods. Among all fabrication approaches, chemical vapor deposition has long been an advanced method for synthesizing two-dimensional (2D) materials due to its ability to ensure precise stacking control and minimize contamination between layers. This study harnessed the potential of CVD to atomically fabricate thin layered 2D silica on a SiO/Si substrate. Significantly, a unique combination of multiple transition metals and salt as the catalysts aided the formation of 2D silica for the first time. Salt is a crucial catalyst in promoting the evaporation of high-melting-point metal catalysts, resulting in hexagonal nucleation sites on the SiO/Si wafer. By meticulously controlling growth parameters, a distinctive hexagonal structure was obtained. Correspondingly, this work delves into the growth mechanism of 2D silica, as evidenced by experiments involving salt alone and individual transition metals. Group VB transition metals played a prominent role in achieving the hexagonal structure compared to their group IVB counterparts. This research offers insight into the formation and growth mechanism of 2D silica, expanding the understanding of silica nanostructures.

中文翻译：

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SiO2/Si基底上二维六方二氧化硅的形成机理

由于其卓越的电子特性，二氧化硅超薄膜已被用作纳米电子系统中的绝缘层。二氧化硅薄膜已使用各种合成方法在不同的基底上外延生长。在所有制造方法中，化学气相沉积长期以来一直是合成二维（2D）材料的先进方法，因为它能够确保精确的堆叠控制并最大限度地减少层间污染。这项研究利用 CVD 的潜力，在 SiO/Si 基底上以原子方式制造薄层二维二氧化硅。值得注意的是，多种过渡金属和盐的独特组合作为催化剂首次有助于二维二氧化硅的形成。盐是促进高熔点金属催化剂蒸发的关键催化剂，可在 SiO/Si 晶片上形成六角形成核位点。通过精心控制生长参数，获得了独特的六边形结构。相应地，这项工作深入研究了二维二氧化硅的生长机制，通过涉及单独盐和单个过渡金属的实验证明了这一点。与 IVB 族过渡金属相比，VB 族过渡金属在实现六方结构方面发挥了突出作用。这项研究深入了解了二维二氧化硅的形成和生长机制，扩大了对二氧化硅纳米结构的理解。