The direct current and radio frequency of DCGC-HEMT and DCTB-HEMT were systematically investigated. Owing to the utilization of a graded-AlGaN bottom barrier to provide more carriers and shield traps in the buffer, DCGC-HEMT exhibited greater saturated drain current and suppression in drain lag, enabling it to show greater output performance than DCTB-HEMT. The improvement in the former’s superior large-signal characteristic indicates its potential for high-performance RF PA applications.

中文翻译：

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使用 AlGaN/GaN/梯度 AlGaN/GaN 双通道结构通过静电屏蔽效应提高射频功率性能

对DCGC-HEMT和DCTB-HEMT的直流电和射频进行了系统研究。由于利用梯度AlGaN底部势垒在缓冲器中提供更多载流子和屏蔽陷阱，DCGC-HEMT表现出更大的饱和漏极电流和漏极滞后抑制，使其比DCTB-HEMT表现出更好的输出性能。前者优越的大信号特性的改进表明了其在高性能射频PA应用中的潜力。