The synthesis of carbon nanowalls (CNWs) necessitated a substrate heating temperature above 600 °C. This study describes a low-temperature growth at 225 °C and characterization of CNWs synthesized by the radical injection plasma-enhanced chemical vapor deposition. To investigate the effect of temperature on the growth process, CNWs were synthesized at various temperatures ranging from 200 °C to 700 °C. The morphology of the CNWs observed with a scanning electron microscope shows that wall density increases as substrate temperature decreases. The Raman spectroscopy analysis indicates that CNWs grown at 225 °C have higher defect levels than those grown at higher temperatures, such as 700 °C. Transmission electron microscopy confirmed the presence of multiple graphene layers in the CNWs grown at 225 °C. The water contact angle results revealed that CNWs grown at 225 °C had higher hydrophobicity than those grown at higher temperatures, opening up the potential for CNW applications.

中文翻译：

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自由基注入等离子体增强化学气相沉积法合成碳纳米墙的225℃低温生长及表征

碳纳米墙 (CNW) 的合成需要基材加热温度高于 600 °C。本研究描述了通过自由基注入等离子体增强化学气相沉积合成的 CNW 在 225 °C 下的低温生长和表征。为了研究温度对生长过程的影响，在 200 °C 至 700 °C 的不同温度下合成 CNW。用扫描电子显微镜观察到的 CNW 的形貌表明，壁密度随着基底温度的降低而增加。拉曼光谱分析表明，在 225 °C 下生长的 CNW 比在更高温度（如 700 °C）下生长的 CNW 具有更高的缺陷水平。透射电子显微镜证实了在 225 °C 下生长的 CNW 中存在多个石墨烯层。水接触角结果表明，在 225 °C 下生长的 CNW 比在更高温度下生长的 CNW 具有更高的疏水性，从而开启了 CNW 应用的潜力。