Ga-atoms dynamic in an Ar/N magnetron sputtering discharge for GaN deposition is explored employing plasma diagnostic techniques such as optical emission spectroscopy and microwave interferometry. Through the assessment of gas temperature, electron temperature and density measured from the abovementioned diagnostics, we estimated both the flux and average energy of Ga-atoms impinging on the substrate. Emphasizing the working pressure as a pivotal factor, this study uncovers a correlation between the Ga-atoms flux, their average energy, and the growth rate and crystallinity of the GaN films extracted from ex-situ characterizations. Notably, the pressure value (6.6 Pa) at which both the growth rate and crystalline fraction are the greatest is also the condition at which both the flux and energy of Ga-atoms impinging on the target are maximal. The findings pave the way for improving the understanding and control of the complex interplay between plasma conditions and resulting film properties in the sputtering process.

中文翻译：

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通过磁控溅射沉积氮化镓：将等离子体表面相互作用与薄膜晶体特征联系起来

采用光学发射光谱和微波干涉测量等等离子体诊断技术，探索了用于 GaN 沉积的 Ar/N 磁控溅射放电中的 Ga 原子动态。通过评估上述诊断测量的气体温度、电子温度和密度，我们估计了撞击基底的 Ga 原子的通量和平均能量。这项研究强调工作压力是一个关键因素，揭示了 Ga 原子通量、平均能量以及从非原位表征中提取的 GaN 薄膜的生长速率和结晶度之间的相关性。值得注意的是，生长速率和结晶分数都最大的压力值（6.6 Pa）也是撞击靶材的Ga原子的通量和能量最大的条件。这些发现为提高对溅射过程中等离子体条件与所得薄膜特性之间复杂相互作用的理解和控制铺平了道路。