In a previous study, GaN‐based nanopillars are grown vertically on a multicrystalline Si substrate by inserting (In)GaN steering crystals. In addition, blue‐green and white light‐emitting diodes (LEDs) are prepared on this substrate for the first time using a double heterotype p–n junction. Herein, the emission‐color distribution characteristics of this type of LED are analyzed in depth, and a related luminescence principle is proposed. Each nanopillar plus an electrode is considered a nanopillar LED, and the emission color of each nanopillar LED is inferred. The indium distribution in the InGaN active region is predicted based on the luminous color and corresponding spectra. Simultaneously, the morphology of related materials, electrical properties of LEDs, and chromaticity coordinates of luminous colors are analyzed and discussed.

中文翻译：

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多晶硅衬底上的 GaN 基纳米柱发光二极管的表征：深入了解发光颜色分布特性

在之前的一项研究中，通过插入 (In)GaN 控制晶体，在多晶硅衬底上垂直生长 GaN 基纳米柱。此外，首次使用双异型p-n结在该基板上制备了蓝绿光和白光发光二极管（LED）。本文深入分析了此类LED的发光颜色分布特性，并提出了相关的发光原理。每个纳米柱加上一个电极被认为是一个纳米柱 LED，并且可以推断每个纳米柱 LED 的发射颜色。根据发光颜色和相应的光谱来预测InGaN有源区中的铟分布。同时对相关材料的形貌、LED的电性能、发光颜色的色品坐标等进行了分析和讨论。