The current study reported influence of simultaneous doping of Mg²⁺ and Ho³⁺ on geometric and intrinsic characteristics of CaCu₃Ti₄O₁₂ ceramics. Rietveld refined XRD patterns confirmed the formation of CCTO ceramic. FESEM images demonstrated that grain growth suppressed significantly from 2.8 to 1.3 µm results in high grain boundary (GB) density with addition of Ho³⁺ in Mg²⁺ doped CCTO ceramics. The XPS studies revealed that oxygen vacancies tends to decline with presence of Cu in higher oxidation state (Cu²⁺) on successive doping of Ho³⁺ ions in host matrix. The impedance spectrum was analyzed in the frequency range of 10²–10⁶ Hz at different temperatures for all prepared samples. The results revealed that reduced grain’s geometry and higher grain boundary density had a dominant influence on the dielectric constant (ε′) and dielectric loss factor (tanδ) and can be controlled by selective concentration of Mg²⁺/Ho³⁺ ions in CCTO ceramics to make them suitable for energy storage applications.

目前的研究报告了同时掺杂Mg ²⁺和Ho ^3+对CaCu ₃ Ti ₄ O ₁₂陶瓷的几何和本征特性的影响。 Rietveld 精制的 XRD 图案证实了 CCTO 陶瓷的形成。 FESEM 图像表明，在 Mg ²⁺掺杂 CCTO 陶瓷中添加 Ho ³⁺后，晶粒生长从 2.8 µm 显着抑制至 1.3 µm，从而导致高晶界 (GB) 密度。 XPS 研究表明，在主体基质中连续掺杂 Ho ^{3+离子时，随着较高氧化态 (Cu 2+} )的 Cu 的存在，氧空位趋于减少。 对所有制备的样品在不同温度下在10 ² –10 ⁶ Hz频率范围内的阻抗谱进行了分析。结果表明，减小的晶粒几何形状和较高的晶界密度对介电常数（ε′）和介电损耗因数（tanδ）具有主导影响，并且可以通过CCTO陶瓷中Mg ²⁺ /Ho ³⁺离子的选择性浓度来控制使它们适合储能应用。