Ultrathin indium tin oxide (ITO) films are investigated for back-end-of-line (BEOL) compatible thin-film transistors (TFTs) by plasma-enhanced atomic layer deposition (PEALD). By optimizing the ITO channel composition and thickness and a novel post-channel annealing (PCA) process, the resulting TFT exhibits high performance ( $\boldsymbol {\mu } _{\text {FE}}\,\, \boldsymbol {=}\,\,28.3$ cm2/ $\text{V}\cdot \text{s}$ , ${V}_{\text {th}}\,\, \boldsymbol {=} -0.29$ V, SS $\boldsymbol {=}\,\,123$ mV/dec, and ${I}_{\text {ON}}/{I}_{\text {OFF}}=8.1 \times 10^{{9}}{)}$ and especially extraordinary thermal stability. The thermal treatment at 400 °C for 60 min in N2 only generates very small variations of -0.17 V and -1.4% for ${V}_{\text {th}}$ and $\boldsymbol {\mu } _{\text {FE}}$ , respectively. Moreover, the optimized device also shows excellent positive/negative bias temperature stress (PBTS/NBTS) stabilities even at 2 MV/cm and 125 °C. Furthermore, when the channel length is reduced to 60 nm, the outstanding electrical performance is demonstrated, such as an ${I}_{\text {ON}}/{I}_{\text {OFF}} \boldsymbol {\sim } 10^{{10}}$ , an ${I}_{\text {ON}}$ of $715 \boldsymbol {\mu } \text{A}/ \boldsymbol {\mu } \text{m}$ , and an ${R}_{C}$ of $0.542 \boldsymbol {\Omega } \cdot $ mm. Thus, our work provides a promising candidate for BEOL compatible transistors in monolithic 3-D integration.

中文翻译：

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原子层沉积 In-Sn-O 薄膜晶体管在 400 °C 下具有鲁棒的热稳定性并可缩小沟道尺寸

通过等离子体增强原子层沉积 (PEALD) 研究超薄氧化铟锡 (ITO) 薄膜用于后端 (BEOL) 兼容薄膜晶体管 (TFT)。通过优化 ITO 沟道成分和厚度以及新颖的沟道后退火 (PCA) 工艺，所得 TFT 表现出高性能（ $\boldsymbol {\mu } _{\text {FE}}\,\, \boldsymbol {=}\,\,28.3$平方厘米/ $\text{V}\cdot \text{s}$ , ${V}_{\text {th}}\,\, \boldsymbol {=} -0.29$V、SS $\boldsymbol {=}\,\,123$mV/dec，和 ${I}_{\text {ON}}/{I}_{\text {OFF}}=8.1 \times 10^{{9}}{)}$尤其是非凡的热稳定性。在 N2 中 400 °C 热处理 60 分钟仅产生非常小的变化 -0.17 V 和 -1.4% ${V}_{\text {th}}$和 $\boldsymbol {\mu } _{\text {FE}}$ ， 分别。此外，优化后的器件即使在 2 MV/cm 和 125 °C 下也表现出优异的正/负偏压温度应力 (PBTS/NBTS) 稳定性。此外，当沟道长度减小至60 nm时，表现出优异的电性能，例如 ${I}_{\text {开启}}/{I}_{\text {关闭}} \boldsymbol {\sim } 10^{{10}}$ ， 一个 ${I}_{\文本{ON}}$的 $715 \boldsymbol {\mu } \text{A}/ \boldsymbol {\mu } \text{m}$ ， 和 ${R}_{C}$的 $0.542 \boldsymbol {\Omega } \cdot $ 毫米。因此，我们的工作为单片 3D 集成中的 BEOL 兼容晶体管提供了一个有前途的候选者。