With the progressive adoption of silicon carbide (SiC) power devices in modern power converters, exploiting their superior efficiency, faster switching speed, and higher power density, an understanding of the factors influencing these properties becomes vital. One such critical factor is switching losses, which can drastically affect overall system performance. This study develops and presents a new analytical model for predicting the turn-on switching losses in SiC MOSFETs with Kelvin pin. The proposed model, derived from a carefully constructed set of nonlinear differential equations, accounts for the nonlinearity of the transconductance by incorporating a novel transfer characteristic model. The model also incorporates the nonlinear junction capacitances effects. The developed analytical model allows for the prediction and optimization of turn-on switching losses in SiC MOSFETs, thus enabling improved energy efficiency and reliability. The accuracy of the proposed model is verified through comparison with experimental results obtained using the double pulse test board that was designed and constructed, demonstrating its applicability for the investigation of SiC MOSFET power losses.

中文翻译：

---

用于评估具有开尔文引脚的 SiC MOSFET 导通开关损耗的分析方法：概念与实现

随着现代功率转换器中逐渐采用碳化硅 (SiC) 功率器件，利用其卓越的效率、更快的开关速度和更高的功率密度，了解影响这些特性的因素变得至关重要。其中一个关键因素是开关损耗，它会极大地影响整体系统性能。本研究开发并提出了一种新的分析模型，用于预测具有开尔文引脚的 SiC MOSFET 的导通开关损耗。所提出的模型源自一组精心构造的非线性微分方程，通过结合新颖的传输特性模型来解释跨导的非线性。该模型还考虑了非线性结电容效应。开发的分析模型可以预测和优化 SiC MOSFET 的导通开关损耗，从而提高能源效率和可靠性。通过与使用设计和构建的双脉冲测试板获得的实验结果进行比较，验证了所提出模型的准确性，证明了其对 SiC MOSFET 功率损耗研究的适用性。