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Comparative study of metal (Fe, Cu and Cr) doped ZnO nanostructure: Self-templated synthesis and application for photoelectrochemical water splitting
Brazilian Journal of Chemical Engineering ( IF 1.2 ) Pub Date : 2024-04-07 , DOI: 10.1007/s43153-024-00452-0
Moez Salem , H. Ghannam , A. Haouas , A. Almohammedi , I. Massoudi

A thorough examination was undertaken to evaluate ZnO nanostructured films doped with transition metals (M = Fe, Cu, and Cr) and their respective functional attributes, emphasizing their potential applications in optical technology and electronic components. Both pure and M-doped ZnO nanostructured films were synthesized through a co-precipitation and spin coating procedure. Structural investigations revealed that all films exhibited hexagonal wurtzite formation. XRD findings highlighted evident evolution in the lattice parameters of prepared doped samples in comparison to the pure ones. The introduction of M doping led to modifications in various crystalline parameters of the host ZnO layers. Photocurrent density measurements illustrated a range from 2.5 µA/cm2 for pristine ZnO to 25, 8 and 19 µA/cm2 for Fe, Cu, and Cr-doped samples, respectively, showcasing distinct variations in performance. Notably, this study represents the first reported comparative analysis of the functional properties of three dopants spin coated in ZnO films. These distinctive results position the coated layers as promising candidates for novel optoelectronic applications.



中文翻译:

金属(Fe、Cu、Cr)掺杂ZnO纳米结构的比较研究:自模板合成及其光电化学水分解应用

对掺杂过渡金属(M = Fe、Cu 和 Cr)的 ZnO 纳米结构薄膜及其各自的功能属性进行了彻底的检查,强调了它们在光学技术和电子元件中的潜在应用。纯ZnO 纳米结构薄膜和M 掺杂ZnO 纳米结构薄膜均通过共沉淀和旋涂程序合成。结构研究表明所有薄膜均表现出六方纤锌矿形成。 XRD 结果表明,与纯样品相比,所制备的掺杂样品的晶格参数发生了明显的变化。 M掺杂的引入导致了主体ZnO层的各种晶体参数的改变。光电流密度测量结果显示,范围从原始 ZnO 的 2.5 µA/cm 2到Fe、Cu 和 Cr 掺杂样品的25、8 和 19 µA/cm 2 ,显示出明显的性能变化。值得注意的是,这项研究首次报道了对 ZnO 薄膜中旋涂的三种掺杂剂的功能特性进行比较分析。这些独特的结果使涂层成为新型光电应用的有希望的候选者。

更新日期:2024-04-07
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