Controlled spin transport in magnetic stacks is required to realize pure spin current-driven logic and memory devices. The control over the generation and detection of the pure spin current is achieved by tuning the spin to charge conversion efficiency of the heavy metal interfacing with ferromagnets. Here, we demonstrate the direct tunability of spin angular momentum transfer and thereby spin pumping, in CoFeB/Pt stack, with interfacial magnetic anisotropy. The ultra-low thickness of the CoFeB thin film by tilting the magnetization from in-plane to out-of plane direction due to interfacial anisotropy from higher thickness of CoFeB thin film. The ferromagnetic resonance measurements are performed to investigate the magnetic anisotropy and spin pumping in CoFeB/Pt stacks. We clearly observe tunable spin pumping effect in the CoFeB/Pt stacks with varying CoFeB thicknesses. The spin current density, with varying ferromagnetic layer thickness, is found to increase from 1.10$$MA/m² to 2.40$$MA/m², with increasing in-plane anisotropy field. Such interfacial anisotropy-controlled generation of pure spin current can potentially lead to next-generation anisotropic spin current-controlled spintronic devices.

需要磁性堆栈中的受控自旋传输来实现纯自旋电流驱动的逻辑和存储器件。对纯自旋电流的产生和检测的控制是通过调整与铁磁体连接的重金属的自旋到电荷转换效率来实现的。在这里，我们展示了 CoFeB/Pt 堆栈中自旋角动量转移和自旋泵浦的直接可调性，具有界面磁各向异性。由于较高厚度的 CoFeB 薄膜的界面各向异性，磁化强度从面内方向倾斜到面外方向，从而实现超低厚度的 CoFeB 薄膜。进行铁磁共振测量是为了研究 CoFeB/Pt 堆栈中的磁各向异性和自旋泵浦。我们清楚地观察到具有不同 CoFeB 厚度的 CoFeB/Pt 堆栈中的可调自旋泵浦效应。发现随着铁磁层厚度的变化，自旋电流密度从 1.10 开始增加$$MA/m ²至 2.40$$MA/m ²，随着面内各向异性场的增加。这种界面各向异性控制的纯自旋电流的产生可能会导致下一代各向异性自旋电流控制的自旋电子器件。