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Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2024-04-08 , DOI: 10.1109/ted.2024.3383419 Prakash Pandey 1 , Tolen M. Nelson 1 , Michael R. Hontz 2 , Daniel G. Georgiev 1 , Raghav Khanna 1 , Alan G. Jacobs 3 , James S. Lundh 3 , James C. Gallagher 3 , Andrew D. Koehler 3 , Karl D. Hobart 3 , Travis J. Anderson 3
中文翻译：
高压垂直 GaN 器件的混合边缘端接：经验验证和稳健的处理容差
更新日期：2024-04-08
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2024-04-08 , DOI: 10.1109/ted.2024.3383419 Prakash Pandey 1 , Tolen M. Nelson 1 , Michael R. Hontz 2 , Daniel G. Georgiev 1 , Raghav Khanna 1 , Alan G. Jacobs 3 , James S. Lundh 3 , James C. Gallagher 3 , Andrew D. Koehler 3 , Karl D. Hobart 3 , Travis J. Anderson 3
Affiliation
中文翻译：
高压垂直 GaN 器件的混合边缘端接：经验验证和稳健的处理容差
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