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Mo/Au $\beta $-Ga$_{\text{2}}$O$_{\text{3}}$ Schottky Barrier Diodes With Low Turn-On Voltage and High On–Off Ratios for Low-Power Consumption Applications
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2024-04-08 , DOI: 10.1109/ted.2024.3384144 Fang Zhang 1 , Xuefeng Zheng 1 , Yunlong He 1 , Wen Hong 1 , Shaozhong Yue 1 , Zijian Yuan 1 , Yehong Li 1 , Yuehua Hong 1 , Yanrong Cao 1 , Ling Lv 1 , Yingzhe Wang 1 , Xiaoli Lu 1 , Xiaohua Ma 1 , Yue Hao 1
中文翻译：
Mo/Au $\beta $-Ga$_{\text{2}}$O$_{\text{3}}$ 肖特基势垒二极管，具有低开启电压和高开关比，可实现低功耗应用领域
更新日期：2024-04-08
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2024-04-08 , DOI: 10.1109/ted.2024.3384144 Fang Zhang 1 , Xuefeng Zheng 1 , Yunlong He 1 , Wen Hong 1 , Shaozhong Yue 1 , Zijian Yuan 1 , Yehong Li 1 , Yuehua Hong 1 , Yanrong Cao 1 , Ling Lv 1 , Yingzhe Wang 1 , Xiaoli Lu 1 , Xiaohua Ma 1 , Yue Hao 1
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中文翻译：
Mo/Au $\beta $-Ga$_{\text{2}}$O$_{\text{3}}$ 肖特基势垒二极管，具有低开启电压和高开关比，可实现低功耗应用领域
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