We report for the first time on an aluminum nitride/gallium nitride (AlN/GaN) heterostructure as a microscale Hall effect sensor for current sensing applications in extreme environments. The AlN/GaN devices demonstrated high signal linearity as a function of the magnetic field across a temperature range from -193 °C to 407 °C. The measured room temperature (RT) supply voltage-related sensitivity ( ${S}_{\text {svrs}}{)}$ and supply current-related sensitivity ( ${S}_{\text {scrs}}{)}$ are 0.055 T-1 and 32 AV-1T-1, respectively. The supply power-related sensitivity ( ${S}_{\text {sprs}}{)}$ is 1.4 VW-1T-1 above 40-mW input bias, which is higher than that of the Al0.2Ga0.8N/GaN device. The designed AlN/GaN micro-Hall sensor is further determined to have a lower power consumption and higher temperature sensitivity than equivalent Al0.2Ga0.8N/GaN Hall devices. When operated in an ac bias mode, the rise time of the Hall sensor was found to be 102 ns, corresponding to a frequency bandwidth of 9.8 MHz. We also observed a phase shift between an applied magnetic field and the Hall sensor signal, which can potentially be helpful to monitor ac line currents.

中文翻译：

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AlN/GaN 异质结构微霍尔效应传感器的温度、灵敏度和频率响应

我们首次报告氮化铝/氮化镓 (AlN/GaN) 异质结构作为微型霍尔效应传感器，用于极端环境下的电流传感应用。 AlN/GaN 器件在 -193 °C 至 407 °C 的温度范围内表现出作为磁场函数的高信号线性度。测得的室温 (RT) 电源电压相关灵敏度 ( ${S}_{\text {svrs}}{)}$和电源电流相关的灵敏度（ ${S}_{\text {scrs}}{)}$分别为 0.055 T-1 和 32 AV-1T-1。与电源功率相关的灵敏度（ ${S}_{\text {sprs}}{)}$比 40mW 输入偏置高 1.4 VW-1T-1，高于 Al0.2Ga0.8N/GaN 器件。进一步确定所设计的AlN/GaN微型霍尔传感器比同等的Al0.2Ga0.8N/GaN霍尔器件具有更低的功耗和更高的温度灵敏度。当在交流偏置模式下工作时，霍尔传感器的上升时间为 102 ns，对应于 9.8 MHz 的频率带宽。我们还观察到施加的磁场和霍尔传感器信号之间的相移，这可能有助于监测交流线路电流。