In this study, Green MicroLEDs with different H ₂ flow during the barrier growth are investigated. We observe that the Indium composition near V-pits affects potential barrier height of the sidewall multiple quantum wells (MQWs) thus has strong impact on screening effect of V-pits. EQE and relative IQE has a dramatically increase with more hydrogen flow during barrier growth, and thermal endurance and wavelength stability was also improved. The enhancement has been confirmed to come from the reduction of non-radiative recombination centers from small V-pits and higher potential barrier height on sidewall MQWs in V-shaped pits which screen dislocations (TDs). These results demonstrate the advantages of modification H ₂ flow during barrier growth and also provide a new concept to modulate potential barrier height of the sidewall MQWs for better screening effect for further improvement on MicroLEDs performance.

中文翻译：

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通过调制 V 坑中侧壁 MQW 的势垒高度制造高效绿色 InGaN/GaN MicroLED

在这项研究中，研究了势垒生长期间具有不同H ₂流量的绿色MicroLED 。我们观察到V坑附近的铟成分影响侧壁多量子阱（MQW）的势垒高度，从而对V坑的屏蔽效果有很大影响。随着势垒生长过程中氢气流量的增加，EQE 和相对 IQE 显着增加，并且耐热性和波长稳定性也得到改善。这种增强已被证实来自于小V形凹坑中非辐射复合中心的减少以及屏蔽位错(TD)的V形凹坑中侧壁MQW上更高的势垒高度。这些结果证明了在势垒生长过程中改变H ₂流的优势 ，并为调节侧壁MQW的势垒高度以获得更好的屏蔽效果以进一步提高MicroLED的性能提供了新的概念。