A comprehensive investigation of long-term environmental stability and performance of flexible hybrid resistive random access memory (RRAM) devices with PVK:MoS2/TiO2 bilayer is presented. These devices were systematically characterized for their switching behavior for a very long duration of 20 months, and it was found that devices were able to maintain their switching behavior with maximum average ${V}_{\text {SET}}$ of ~1.5 V and lowest average ${V}_{\text {RESET}}$ of ~ −1.8 V, indicating high shelf life and low-voltage operation. Excellent retention of 104s was exhibited by devices even after being in ambient environment for 20 months. Although the devices exhibited almost unchanged ${V}_{\text {SET}}$ and ${V}_{\text {RESET}}$ values upon variation of humidity exposure (RH ~42% to ~99%), an increase in the magnitude of both was observed upon temperature variation from room temperature (RT) to 100 °C. A typical decay in ${I}_{\text {ON}}/{I}_{\text {OFF}}$ by more than an order of magnitude (from ~103) was observed upon aging and application of temperature; however, an increase in the same was observed upon exposure to high humidity on the order of 102–103. Our investigation indicates that (PVK:MoS2/TiO2) hybrid switching layer can be suitable for environmentally stable nonvolatile memory devices for flexible electronics.

中文翻译：

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使用 PVK:MoS2/TiO2 双层的柔性混合 RRAM 器件的保质期和性能的综合研究

对具有 PVK:MoS2/TiO2 双层的柔性混合电阻式随机存取存储器 (RRAM) 器件的长期环境稳定性和性能进行了全面研究。对这些器件在 20 个月的很长一段时间内的开关行为进行了系统的表征，结果发现器件能够以最大平均水平维持其开关行为。 ${V}_{\文本{SET}}$~1.5 V 和最低平均值 ${V}_{\text {重置}}$~ −1.8 V，表明高保质期和低电压运行。即使在周围环境中放置 20 个月后，设备仍表现出出色的 104s 保留能力。尽管这些设备几乎没有变化 ${V}_{\文本{SET}}$和 ${V}_{\text {重置}}$当温度从室温 (RT) 变化到 100 °C 时，观察到两者的幅度都在增加。典型的衰变 ${I}_{\text {开启}}/{I}_{\text {关闭}}$在老化和施加温度时观察到超过一个数量级（从〜103）；然而，当暴露于 102-103 的高湿度时，观察到该值会增加。我们的研究表明，(PVK:MoS2/TiO2)混合开关层可适用于柔性电子产品的环境稳定的非易失性存储器件。