High-performance broadband photodetectors (PDs) based on transition metal dichalcogenides (TMDs) materials are highly desired for cutting-edge optoelectronics to address the issue of the complexity involved with conventional materials. Despite the reports of the fabrication of broadband PDs based on TMDs, the challenge of employing a less complicated and low-cost fabrication process without compromising performance still needs to be addressed. Hence, the present article reports the fabrication of an economical, facile, water-soluble (nontoxic), and low-temperature operated hydrothermally synthesized WS2-quantum dots (QDs)/Si vertical heterojunction-based broadband PD. The fabricated PD demonstrated to operate at a broad spectrum ranging from 365 to 950 nm (UV–Vis–NIR) and showed a peak responsivity value of 90.21 A / W, external quantum efficiency (EQE) of 30648.55%, and detectivity of $2.08\times 10^{\mathbf {{14}}}$ Jones at 365 nm. The PD also demonstrated a fast photoresponse speed with a rise and fall time of 44.3 and 39.2 ms, respectively.

中文翻译：

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用于高效宽光谱 (UV-Vis-NIR) 光电检测的水热合成 WS2-QD/Si (0-D/3-D) 垂直异质结

尖端光电子学非常需要基于过渡金属二硫族化物（TMD）材料的高性能宽带光电探测器（PD）来解决传统材料的复杂性问题。尽管有基于 TMD 制造宽带 PD 的报道，但在不影响性能的情况下采用不太复杂且低成本的制造工艺的挑战仍然需要解决。因此，本文报道了一种经济、简便、水溶性（无毒）和低温操作的水热合成WS2量子点（QD）/Si垂直异质结宽带PD的制造方法。所制造的 PD 可在 365 至 950 nm（UV-Vis-NIR）的宽光谱范围内工作，峰值响应度值为 90.21 A/W，外量子效率 (EQE) 为 30648.55%，检测灵敏度为 $2.08\乘以10^{\mathbf {{14}}}$琼斯在 365 nm。 PD 还表现出快速的光响应速度，上升时间和下降时间分别为 44.3 毫秒和 39.2 毫秒。