The gradual, abrupt, and abnormal reset transitions have been experimentally demonstrated in resistive random access memories (RRAMs). Yet a compact model that could well explain and reproduce the various observed reset phenomena is still under active exploration due to the various physical processes involved. In this study, we develop a consistent compact model for bipolar/unipolar RRAMs, which can comprehensively explain the gradual and abrupt reset transitions, as well as many abnormal phenomena during the reset processes. These abnormal reset processes include the reverse set during reset (reset failure), a gentle set process after the reset transition, and the reset transition during backward voltage sweeps. In this model, we systematically study the competition between defect generation and recombination processes, the energy barriers for oxygen ion migration into and out of the reservoir layer, and the vacancy concentration of the filament. Based on the model, we experimentally demonstrate tuning of the device switching behavior. This study provides important insights into the reset dynamics and guidelines for predictably controlling RRAM switching behaviors.

中文翻译：

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双极/单极金属氧化物 RRAM 中逐渐、突然和异常复位现象的一致模型

逐渐的、突然的和异常的复位转换已经在电阻随机存取存储器（RRAM）中得到了实验证明。然而，由于涉及各种物理过程，能够很好地解释和重现各种观察到的重置现象的紧凑模型仍在积极探索中。在这项研究中，我们为双极/单极 RRAM 开发了一个一致的紧凑模型，它可以全面解释逐渐和突然的复位转变，以及复位过程中的许多异常现象。这些异常复位过程包括复位期间的反向置位（复位失败）、复位转变后的平缓置位过程以及反向电压扫描期间的复位转变。在该模型中，我们系统地研究了缺陷产生和复合过程之间的竞争、氧离子迁移进出储层的能垒以及细丝的空位浓度。基于该模型，我们通过实验演示了设备切换行为的调整。这项研究为重置动态提供了重要见解，并为可预测地控制 RRAM 开关行为提供了指导。