High critical field ( ${E}_{c}$ ) and low specific ON-resistance ( ${R}_{ON}$ ) $\beta $ -Ga2O3 devices such as accumulation channel metal-oxide-semiconductor field-effect-transistors (MOSFET) have been reported for high-power and extreme environment applications. Channel carrier mobility is a critical factor to reduce ${R}_{ON}$ , but a lack of studies on channel mobility in $\beta $ -Ga2O3 MOSFETs hinders understanding the electrical characteristics. We study carrier mobility in the channels with various doping concentrations using MOS-gated Hall measurements. Our MOSFET achieves a record-high peak channel mobility ( $\mu _{peak}$ ) of 143 cm2/ $\text{V}\cdot \text{s}$ , to the best of our knowledge. Moreover, we suggest that further improvements can be made by enhancing Coulomb scattering-limited mobility ( $\mu _{C}$ ).

中文翻译：

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β-Ga2O3 横向累积 MOSFET 中的重掺杂沟道载流子迁移率

高临界场（ ${E}_{c}$ ）和低比导通电阻（ ${R}_{开}$ ） $\贝塔$ -Ga2O3 器件，例如累积沟道金属氧化物半导体场效应晶体管 (MOSFET)，已被报道用于高功率和极端环境应用。沟道载流子迁移率是降低的关键因素 ${R}_{开}$ ，但缺乏对通道迁移率的研究 $\贝塔$ -Ga2O3 MOSFET 阻碍了对其电气特性的理解。我们使用 MOS 门控霍尔测量来研究具有不同掺杂浓度的沟道中的载流子迁移率。我们的 MOSFET 实现了创纪录的峰值沟道迁移率（ $\mu _{峰值}$ ) 143 cm2/ $\text{V}\cdot \text{s}$ ，据我们所知。此外，我们建议可以通过增强库仑散射限制迁移率来进一步改进（ $\mu _{C}$ ）。