AlGaN deep ultraviolet light-emitting diodes (DUV LEDs) have potential applications in free-space communication, but their current limited efficiency restricts the further development of free-space ultraviolet communication (FSUC) applications. In this work, an etched reflective array (ERA) strategy has been proposed in DUV micro-LEDs with various pixel sizes of 20, 30, and $60~\mu \text{m}$ , to enhance the efficiency via etching the p-GaN layer to reduce light absorption and fabricating full-spatial omnidirectional reflector (FSODR) to increase light extraction. The 20- $\mu \text{m}$ DUV micro-LEDs with ERA strategy exhibit a light output power (LOP) of 39.9 mW at 160 mA and a record high wall-plug efficiency (WPE) of 8.3% at 5 mA. Critically, both the transverse-magnetic (TM) and transverse-electric (TE) mode light intensity are significantly enhanced by 52.59% and 46.29%, respectively, compared with the device without ERA strategy. Furthermore, simulation results show that the light extraction efficiency (LEE) of TM- and TE-polarized light for the 20- $\mu \text{m}$ DUV micro-LEDs with ERA strategy are enhanced by 48.66% and 46.05%, respectively. In addition, this device achieves a high data transmission rate of 3.819 Gbps in FSUC.

中文翻译：

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高壁插式效率 AlGaN 深紫外 Micro-LED 通过蚀刻反射阵列设计实现高数据传输

AlGaN深紫外发光二极管（DUV LED）在自由空间通信中具有潜在的应用，但其目前有限的效率限制了自由空间紫外通信（FSUC）应用的进一步发展。在这项工作中，在具有 20、30 和 30 多种像素尺寸的 DUV micro-LED 中提出了蚀刻反射阵列 (ERA) 策略。 $60~\mu \text{m}$ ，通过蚀刻p-GaN层以减少光吸收并制造全空间全向反射器（FSODR）以增加光提取来提高效率。 20- $\mu \文本{m}$采用 ERA 策略的 DUV micro-LED 在 160 mA 电流下表现出 39.9 mW 的光输出功率 (LOP)，在 5 mA 电流下表现出创纪录的 8.3% 电光转换效率 (WPE)。关键的是，与没有 ERA 策略的器件相比，横磁 (TM) 和横电 (TE) 模式光强度分别显着增强了 52.59% 和 46.29%。此外，模拟结果表明 20- TM 和 TE 偏振光的光提取效率 (LEE) $\mu \文本{m}$采用ERA策略的DUV micro-LED分别增强了48.66%和46.05%。此外，该器件在 FSUC 中实现了 3.819 Gbps 的高数据传输速率。