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Production of silicon by microwave heating
ISIJ International ( IF 1.8 ) Pub Date : 2024-04-09 , DOI: 10.2355/isijinternational.isijint-2023-382
Kazuhiro Nagata 1 , Hiroyuki Horikoshi 2
Affiliation  

Mixed powder of SiO2 and SiC was heated to produce Si in air by irradiating multi-mode microwave at 2.45 GHz using a porous alumina crucible of sintered cement. SiC generated heat inside the mixture. Mullite layer was produced inside of crucible wall. Molten Si was produced at the apparent temperature between 1550°C and 1600°C during 5400s and 6000s. The apparent temperature was much lower than 1778°C determined thermodynamically. This is the characteristics of microwave that heat generates at the contact points of particles and the pointed parts of the surface in powder. A furnace for producing high-quality Si by microwave heating is proposed.



中文翻译:

微波加热生产硅

使用烧结水泥的多孔氧化铝坩埚,通过照射2.45GHz的多模微波,在空气中加热SiO 2和SiC的混合粉末以产生Si。 SiC 在混合物内部产生热量。坩埚壁内部产生莫来石层。熔融硅是在 5400 秒到 6000 秒的表观温度 1550°C 到 1600°C 之间产生的。表观温度远低于热力学测定的 1778°C。这是微波的特性,即粉末中颗粒与表面尖锐部分的接触点产生热量。提出了一种通过微波加热生产高品质硅的炉子。

更新日期:2024-04-10
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