This study expands on a previous investigation by substituting lanthanum with various trivalent ions in the compound (CaSr)ACuTiO (A = La, Sm, Sc, Gd, Y and Bi) through solid-state synthesis. The analysis includes microstructures, optical, dielectric, and nonlinear properties. Sr/A-doped CCTO exhibits a significant reduction in grain size. The doped samples display a band gap ranging from 3.22 eV to 3.36 eV, with high dielectric permittivity ('≈4.51 × 10-5.37 × 10). Additionally, Sr/A doping enhances the thermal stability compared to pure CCTO ceramic. Specifically, Sr/Sc-doped compound shows low loss tangent (tanδ≈0.04) at 60 °C, with the dielectric loss remaining below 0.1 over a temperature range from 50 °C to 160 °C. Furthermore, there is a significant improvement in breakdown voltage (E = 8420 V/cm), which is 23 times higher than CCTO (362.5 V/cm), and the coefficient α increases from 3.28 to 12.76. These enhancements are attributed to inhibiting the formation of Ti and reducing oxygen vacancies.

中文翻译：

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锶和供体离子取代对(Ca0.9Sr0.1)0.95A0.033Cu3Ti4O12陶瓷介电、光学和非线性特性的影响

本研究扩展了之前的研究，通过固态合成在化合物 (CaSr)ACuTiO（A = La、Sm、Sc、Gd、Y 和 Bi）中用各种三价离子取代镧。分析包括微观结构、光学、介电和非线性特性。 Sr/A 掺杂的 CCTO 表现出晶粒尺寸的显着减小。掺杂样品的带隙范围为 3.22 eV 至 3.36 eV，具有高介电常数 ('≈4.51 × 10-5.37 × 10)。此外，与纯 CCTO 陶瓷相比，Sr/A 掺杂增强了热稳定性。具体而言，Sr/Sc 掺杂化合物在 60 °C 时表现出低损耗角正切 (tanδ≈0.04)，在 50 °C 至 160 °C 的温度范围内介电损耗保持在 0.1 以下。此外，击穿电压（E = 8420 V/cm）也有显着改善，比CCTO（362.5 V/cm）高23倍，系数α从3.28增加到12.76。这些增强归因于抑制钛的形成和减少氧空位。