Understanding the dynamics of growth conditions is crucial for optimizing graphene structures to integrate them effectively into advanced electronic applications. In this study, a low-temperature process was employed in a plasma atmosphere to highlight the significant role of H in modulating the growth modes of nanocrystalline graphene (-G) on representative metal substrates, including Cu, Ru, and Co. H altered the surface-mediated growth mode from vertical to lateral on Cu. Moreover, it reduced C adsorption on metal surfaces, resulting in a notable reduction in the surface-mediated growth rate of -G. The effects of H varied depending on the metal substrate with different H adsorption energies. For metals that favor bulk-mediated growth, H had a secondary effect because C supply was predominantly determined by the thickness and C solubility of the metal. Therefore, this study offers a comprehensive framework for adjusting the growth conditions and setting the groundwork for utilizing -G in future electronic systems.

中文翻译：

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金属薄膜上纳米晶石墨烯的低温生长

了解生长条件的动态对于优化石墨烯结构以将其有效地集成到先进电子应用中至关重要。在这项研究中，在等离子体气氛中采用低温工艺来强调 H 在调节代表性金属基底（包括 Cu、Ru 和 Co）上纳米晶石墨烯 (-G) 的生长模式方面的重要作用。H 改变了Cu 上从垂直到横向的表面介导生长模式。此外，它减少了金属表面上的碳吸附，导致表面介导的-G生长速率显着降低。 H 的影响因具有不同 H 吸附能的金属基材而异。对于有利于体介导生长的金属，H 具有次要影响，因为 C 供应主要由金属的厚度和 C 溶解度决定。因此，这项研究提供了一个综合框架，用于调整生长条件并为在未来电子系统中利用-G奠定基础。