Extended x-ray absorption fine structure spectroscopy was used to investigate the neighborhood of In and Ga atoms in InGaSb thin films, deposited by magnetron sputtering and, subsequently, irradiated with 8 MeV Au ions, with ion fluences ranging from 1 × 10 cm to 5 × 10 cm. For as-deposited films, it was verified that the lattice mismatch in InGaSb is accommodated favorably through bond bending over bond stretching. This accommodation was modelled for all possible first nearest neighbor configurations based on experimentally determined structural parameters. Based on this, it was obtained that structural and electronic effects both contribute to the bandgap change in a similar way and neither local atomic arrangements nor charge redistribution can be neglected. Upon ion irradiation, this compound preserves its constant bond length value for the range of ion fluences used in this work.

中文翻译：

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沉积时和离子辐照后的 In1-xGaxSb 薄膜的原子尺度结构

使用扩展 X 射线吸收精细结构光谱研究了 InGaSb 薄膜中 In 和 Ga 原子的邻域，该薄膜通过磁控溅射沉积，随后用 8 MeV Au 离子照射，离子注量范围为 1 × 10 cm 至 5 × 10 厘米。对于沉积薄膜，已证实 InGaSb 中的晶格失配通过键弯曲而不是键拉伸得到了有利的调节。这种适应是基于实验确定的结构参数对所有可能的第一最近邻配置进行建模的。基于此，我们发现结构效应和电子效应都以类似的方式对带隙变化做出贡献，并且局域原子排列和电荷重新分布都不可忽视。离子辐照后，该化合物在本工作中使用的离子注量范围内保持其恒定的键长值。