SmPb[(MgNb)Ti]O (Sm-PMN-PT) ceramics possess excellent piezoelectric performance and exhibit great potential in electronic device applications. However, traditional fabrication methods commonly difficult to prepare Sm-PMN-PT ceramics with complex structures, which restricts their applications. Additive manufacturing techniques offer novel approaches to preparing Sm-PMN-PT ceramics. In the current investigation, Sm-PMN-PT ceramics with high-precision complex structures were successfully prepared by vat photopolymerization (VPP). In the first step, the Sm-PMN-PT ceramic slurry that can be employed for VPP technology is obtained by selecting photosensitive resins with high refractive index and optimizing the particle size of powders. The curing depth of slurry associated with the exposure time of 8 s is obtained as 41 μm, the corresponding exposure power density is 37.5 mW/cm, and the viscosity pertinent to the shear rate of 100 s is obtained as 0.46 Pa·s. The dimensional error of Sm-PMN-PT green bodies can be controlled within 270 μm, and the relative density of sintered Sm-PMN-PT ceramics reaches 98%. The results reveal that Sm-PMN-PT ceramics exhibit excellent dielectric and piezoelectric properties, where the relative dielectric constant , dielectric loss tan, and piezoelectric coefficient in order are 6452, 0.0434, and 1230 pC/N. Additionally, Sm-PMN-PT ceramic components with triply periodic minimum surface (TPMS) structures are successfully employed to fabricate 3–3 piezocomposite, and of piezocomposites could reach 432 pC/N, the output voltage could touch 80 mV when subject to periodical forced vibration. The present research demonstrates that VPP technology is capable of successfully fabricating Sm-PMN-PT ceramics with high piezoelectric performance and high-precision complex structures, thereby broadening their application range.

中文翻译：

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光聚合法制备高精度复杂结构Sm-PMN-PT大压电响应陶瓷

SmPb[(MgNb)Ti]O (Sm-PMN-PT)陶瓷具有优异的压电性能，在电子器件应用中表现出巨大的潜力。然而，传统的制备方法通常难以制备结构复杂的Sm-PMN-PT陶瓷，限制了其应用。增材制造技术提供了制备 Sm-PMN-PT 陶瓷的新方法。本研究通过还原光聚合（VPP）成功制备了高精度复杂结构的Sm-PMN-PT陶瓷。第一步，通过选择高折射率光敏树脂并优化粉末粒径，得到可用于VPP技术的Sm-PMN-PT陶瓷浆料。与曝光时间8 s相关的浆料固化深度为41 μm，相应的曝光功率密度为37.5 mW/cm，与剪切速率100 s相关的粘度为0.46 Pa·s。 Sm-PMN-PT坯体尺寸误差可控制在270μm以内，烧结后Sm-PMN-PT陶瓷的相对密度达到98%。结果表明，Sm-PMN-PT陶瓷具有优异的介电和压电性能，其相对介电常数、介电损耗tan值和压电系数依次为6452、0.0434和1230 pC/N。此外，具有三周期最小表面（TPMS）结构的Sm-PMN-PT陶瓷元件被成功地用于制造3-3压电复合材料，并且压电复合材料的密度可以达到432 pC/N，当受到周期性强迫时，输出电压可以达到80 mV振动。目前的研究表明，VPP技术能够成功制备具有高压电性能和高精度复杂结构的Sm-PMN-PT陶瓷，从而拓宽了其应用范围。