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Asymmetric and Double-Layered Gate-All-Around Structures of 1T-DRAM for Sensing Margin and Retention Improvement
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2024-04-10 , DOI: 10.1109/ted.2024.3385394 Semyung Kwon 1 , Ilgu Yun 1
中文翻译：
1T-DRAM 的非对称双层环栅结构，用于提高感测裕度和保持力
更新日期：2024-04-10
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2024-04-10 , DOI: 10.1109/ted.2024.3385394 Semyung Kwon 1 , Ilgu Yun 1
Affiliation
中文翻译：
1T-DRAM 的非对称双层环栅结构，用于提高感测裕度和保持力
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