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Wafer-Scale GaN-Si(100) Monolithic Heterogeneous Integration Inverters With Improved Output Voltage Swing and Fast Switching Capability by Transfer Printing and Self-Aligned Etching Technology
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2024-04-10 , DOI: 10.1109/ted.2024.3384930 Yutong Fan 1 , Weihang Zhang 1 , Zhihong Liu 1 , Shenglei Zhao 1 , Yang Jiang 2 , Pui In Mak 2 , Yue Hao 1 , Jincheng Zhang 1
中文翻译：
通过转移印刷和自对准蚀刻技术提高输出电压摆幅和快速开关能力的晶圆级 GaN-Si(100) 单片异质集成逆变器
更新日期：2024-04-10
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2024-04-10 , DOI: 10.1109/ted.2024.3384930 Yutong Fan 1 , Weihang Zhang 1 , Zhihong Liu 1 , Shenglei Zhao 1 , Yang Jiang 2 , Pui In Mak 2 , Yue Hao 1 , Jincheng Zhang 1
Affiliation
中文翻译：
通过转移印刷和自对准蚀刻技术提高输出电压摆幅和快速开关能力的晶圆级 GaN-Si(100) 单片异质集成逆变器
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