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Improving the Ferroelectric Properties of Nd:HfO$_{\text{2}}$ Thin Films by Stacking Hf$_{\text{0.5}}$Zr$_{\text{0.5}}$O$_{\text{2}}$ Interlayers
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2024-04-10 , DOI: 10.1109/ted.2024.3385383 Yongguang Xiao 1 , Yong Jiang 1 , Lisha Yang 1 , Ningjie Ma 1 , Gang Li 1 , Jun Ouyang 2 , Minghua Tang 1
中文翻译：
通过堆叠 Hf$_{\text{0.5}}$Zr$_{\text{0.5}}$O$_{\text 提高 Nd:HfO$_{\text{2}}$ 薄膜的铁电性能{2}}$ 夹层
更新日期：2024-04-10
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2024-04-10 , DOI: 10.1109/ted.2024.3385383 Yongguang Xiao 1 , Yong Jiang 1 , Lisha Yang 1 , Ningjie Ma 1 , Gang Li 1 , Jun Ouyang 2 , Minghua Tang 1
Affiliation
中文翻译：
通过堆叠 Hf$_{\text{0.5}}$Zr$_{\text{0.5}}$O$_{\text 提高 Nd:HfO$_{\text{2}}$ 薄膜的铁电性能{2}}$ 夹层
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