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Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium–Tin–Zinc–Oxide Channel
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2024-04-10 , DOI: 10.1109/ted.2024.3385395 Yan-Kui Liang, Jun-Yang Zheng, Yu-Lon Lin, Yu-Cheng Lu, Dong-Ru Hsieh, Tsung-Te Chou, Chi-Chung Kei, Huai-Ying Huang, Yu-Ming Lin, Yuan-Chieh Tseng, Tien-Sheng Chao, Edward Yi Chang, Kasidit Toprasertpong, Shinichi Takagi, Chun-Hsiung Lin
中文翻译：
具有超薄原子层沉积氧化铟锡通道的高度规模化 BEOL 兼容薄膜晶体管
更新日期：2024-04-10
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2024-04-10 , DOI: 10.1109/ted.2024.3385395 Yan-Kui Liang, Jun-Yang Zheng, Yu-Lon Lin, Yu-Cheng Lu, Dong-Ru Hsieh, Tsung-Te Chou, Chi-Chung Kei, Huai-Ying Huang, Yu-Ming Lin, Yuan-Chieh Tseng, Tien-Sheng Chao, Edward Yi Chang, Kasidit Toprasertpong, Shinichi Takagi, Chun-Hsiung Lin
中文翻译：
具有超薄原子层沉积氧化铟锡通道的高度规模化 BEOL 兼容薄膜晶体管
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