With the rapid growth of mobile communication data in recent years, visible light communication (VLC) technology based on GaN LEDs can cope with spectrum crises. However, as a light source device, the modulation bandwidth (MB) and light output power (LOP) are not ideal, which hinders communication quality and system reliability. This work proposes the high-reliability graphene (Gr)/GaN-based micro-light-emitting diodes (micro-LEDs) arrays with an LOP of 46 mW and a high -3-dB MB of 610 MHz at the current density of 6.7 kA/cm2. The various layers of Gr were adopted to increase carrier radiative recombination rate and current spreading in the quantum wells, which can effectively increase the reliability and LOP, as well as reduce the aging of LOP. With the appropriate layers of Gr, hole injection was enhanced and current expansion was improved accordingly, increasing the MB of the micro-LEDs. Possessing high MB, the micro-LEDs arrays also achieved high LOP and low aging rate under high temperature and humidity conditions by introducing the appropriate number of Gr layers, which will be beneficial to improve the lifespan and reliability of the micro-LEDs. The optimistic results in this letter possess high potential of providing high LOP and MB light sources in VLC system.

中文翻译：

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用于可见光通信的基于石墨烯/GaN 的 Micro-LED 阵列演示

随着近年来移动通信数据的快速增长，基于GaN LED的可见光通信（VLC）技术可以应对频谱危机。然而，作为光源器件，调制带宽（MB）和光输出功率（LOP）并不理想，这阻碍了通信质量和系统可靠性。这项工作提出了高可靠性石墨烯（Gr）/GaN基微型发光二极管（micro-LED）阵列，其LOP为46 mW，在电流密度为6.7时具有610 MHz的高-3-dB MB kA/cm2。采用多层Gr来提高量子阱中载流子的辐射复合率和电流扩散，可以有效提高可靠性和LOP，并减少LOP的老化。通过适当的 Gr 层，空穴注入得到增强，电流扩展也相应得到改善，从而增加了 micro-LED 的 MB。 Micro-LED阵列在具有高MB的同时，通过引入适当数量的Gr层，在高温高湿条件下也实现了高LOP和低老化率，这将有利于提高Micro-LED的寿命和可靠性。这封信中的乐观结果具有在 VLC 系统中提供高 LOP 和 MB 光源的巨大潜力。