A novel two-terminal vertical bridge structure nanoscale vacuum electronic device (NVED) is proposed to optimize the device structure for improved frequency characteristics in this study. By introducing a bridge structure, the sacrificial layers used for supporting between the electrodes are completely released, resulting in suspended electrodes. This successful implementation has significantly reduced the interelectrode capacitance to a level comparable to that of planar lateral devices. As a result, the frequency characteristics of the vertical structure device have been greatly enhanced. The fabrication of this device is obtained by a combination of atomic layer deposition (ALD) and buffered oxide etching (BOE), which is compatible with the CMOS process. The emission characteristics of the fabricated device under atmospheric conditions are measured with excellent stability and repeatability. More importantly, for the first time, the scattering parameters of the NVED have been measured under 0-V bias conditions within a frequency range of 10 MHz–10 GHz. A high-frequency small-signal model has also been established and validated against the measured parameters, demonstrating good consistency over the entire frequency range. Ultimately, the study successfully validates the frequency conversion functionality of the proposed NVED. These results highlight the potential of the device for operation in the high-frequency range, which is particularly significant in communication and radar applications.

中文翻译：

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晶圆级垂直桥结构纳米真空电子器件的设计和高频表征

本研究提出了一种新型两端垂直桥结构纳米级真空电子器件（NVED），以优化器件结构以改善频率特性。通过引入桥结构，电极之间用于支撑的牺牲层被完全释放，从而产生悬浮电极。这一成功的实施已将电极间电容显着降低至与平面横向器件相当的水平。从而使立式结构器件的频率特性得到了极大的增强。该器件的制造是通过原子层沉积（ALD）和缓冲氧化物蚀刻（BOE）相结合来实现的，与CMOS工艺兼容。所制造的器件在大气条件下的发射特性测量具有优异的稳定性和重复性。更重要的是，首次在 10 MHz-10 GHz 频率范围内、0 V 偏置条件下测量了 NVED 的散射参数。还建立了高频小信号模型，并根据测量参数进行了验证，在整个频率范围内表现出良好的一致性。最终，该研究成功验证了所提出的 NVED 的变频功能。这些结果凸显了该器件在高频范围内运行的潜力，这在通信和雷达应用中尤其重要。