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Wide Temperature Range Modeling of Implanted Resistors Based on 4H-SiC CMOS Process
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2024-04-10 , DOI: 10.1109/ted.2024.3385382 Wenhao Yang 1 , Yuyin Sun 1 , Mengnan Qi 1 , Zhenyu Tang 1 , Shasha Mao 1 , Lei Yuan 1 , Lejia Sun 1 , Yimeng Zhang 1 , Yuming Zhang 1
中文翻译：
基于 4H-SiC CMOS 工艺的植入电阻的宽温度范围建模
更新日期：2024-04-10
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2024-04-10 , DOI: 10.1109/ted.2024.3385382 Wenhao Yang 1 , Yuyin Sun 1 , Mengnan Qi 1 , Zhenyu Tang 1 , Shasha Mao 1 , Lei Yuan 1 , Lejia Sun 1 , Yimeng Zhang 1 , Yuming Zhang 1
Affiliation
中文翻译：
基于 4H-SiC CMOS 工艺的植入电阻的宽温度范围建模
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