Doping technologies for 2-D materials, such as substitutional doping or molecular surface doping, inevitably introduce scattering caused by ionized dopants, resulting in carrier mobility degradation. Moreover, these processes are not CMOS-compatible and therefore hinder practical integration. In this study, we report the realization of remote doping and reduced carrier scattering in molybdenum disulfide (MoS2) field-effect transistor (FET) with silicon oxynitride/alumina (SiOxNy/AlOx) encapsulation layer fabricated by CMOS-compatible process. Charged dopants in SiOxNy remotely dope the underlying MoS2 channel by inserting a high- ${k}$ dielectric AlOx, keeping themselves spatially separated from the channel and contributing to an increase in carrier density and mobility. By depositing a charge modulation layer SiOxNy, it is possible to achieve an electron density change ( $\Delta {n}$ ) of $2.2\times 10^{{12}}$ cm $^{-{2}}$ . Additionally, the remotely doped MoS2 FETs exhibit improved contact and increased room-temperature mobility compared to the pristine MoS2 FETs. Furthermore, the temperature-dependent characterization of the remotely doped MoS2 FET demonstrates significant suppression of charged impurity scattering.

中文翻译：

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使用 CMOS 兼容工艺在 MoS2 场效应晶体管中实现远程掺杂和抑制散射

二维材料的掺杂技术，例如替代掺杂或分子表面掺杂，不可避免地会引入离子化掺杂剂引起的散射，导致载流子迁移率下降。此外，这些工艺与 CMOS 不兼容，因此阻碍了实际集成。在这项研究中，我们报告了采用 CMOS 兼容工艺制造的氮氧化硅/氧化铝 (SiOxNy/AlOx) 封装层在二硫化钼 (MoS2) 场效应晶体管 (FET) 中实现远程掺杂并减少载流子散射。 SiOxNy 中的带电掺杂剂通过插入高电荷来远程掺杂底层 MoS2 通道。 ${k}$电介质 AlOx，使其与沟道在空间上分离，有助于增加载流子密度和迁移率。通过沉积电荷调制层SiOxNy，可以实现电子密度的变化（ $\Delta {n}$ ） 的 $2.2\乘以10^{{12}}$厘米 $^{-{2}}$ 。此外，与原始 MoS2 FET 相比，远程掺杂 MoS2 FET 表现出更好的接触性和更高的室温迁移率。此外，远程掺杂 MoS2 FET 的温度相关特性表明，带电杂质散射具有显着抑制作用。